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APTM10DUM02

Advanced Power Technology
Part Number APTM10DUM02
Manufacturer Advanced Power Technology
Description MOSFET Power Module
Published Jul 7, 2007
Detailed Description APTM10DUM02 Dual Common Source MOSFET Power Module D1 Q1 D2 Q2 VDSS = 100V RDSon = 2.25mΩ typ @ Tj = 25°C ID = 495A @ T...
Datasheet PDF File APTM10DUM02 PDF File

APTM10DUM02
APTM10DUM02

Overview
APTM10DUM02 Dual Common Source MOSFET Power Module D1 Q1 D2 Q2 VDSS = 100V RDSon = 2.
25mΩ typ @ Tj = 25°C ID = 495A @ Tc = 25°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies G1 G2 S1 S S2 G1 www.
DataSheet4U.
com D1 S D2 Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile S1 S2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1-6 APTM10DUM02– Rev 0 May, 2005 Max ratings 100 495 370 1900 ±30 2.
5 1250 100 50 3000 Unit V A V mΩ W A APTM10DUM02 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Tj = 25°C Tj = 125°C Typ VGS = 10V, ID = 200A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V 2.
25 2 Max 400 2000 2.
5 4 ±400 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Ch...


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