DatasheetsPDF.com

APTM120TA57FP

Advanced Power Technology
Part Number APTM120TA57FP
Manufacturer Advanced Power Technology
Description MOSFET Power Module
Published Jul 7, 2007
Detailed Description APTM120TA57FP Triple phase leg MOSFET Power Module VBUS1 VBUS2 VBUS3 VDSS = 1200V RDSon = 570mΩ max @ Tj = 25°C ID = 17...
Datasheet PDF File APTM120TA57FP PDF File

APTM120TA57FP
APTM120TA57FP


Overview
APTM120TA57FP Triple phase leg MOSFET Power Module VBUS1 VBUS2 VBUS3 VDSS = 1200V RDSon = 570mΩ max @ Tj = 25°C ID = 17A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control G1 G3 G5 S1 U S3 V S5 W G2 G4 G6 S2 0/VBUS1 S4 0/VBUS2 S6 0/VBUS3 Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a phase leg of three times the current capability • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge Max ratings 1200 17 13 68 ±30 570 390 22 50 3000 Unit V APTM120TA57FP– Rev 0 September, 2004 www.
DataSheet4U.
com VBUS 1 VBUS 2 VBUS 3 G1 0/VBUS 1 S1 S2 G2 0/VBUS 2 G3 S3 S4 G4 0/VBUS 3 G5 S5 S6 G6 U V W Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C A V mΩ W A mJ Tc = 25°C These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1–6 APTM120TA57FP All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteris...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)