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APTM120UM95F-ALN

Part Number	APTM120UM95F-ALN
Manufacturer	Advanced Power Technology
Description	MOSFET Power Module
Published	Jul 7, 2007
Detailed Description	APTM120UM95F-AlN Single Switch MOSFET Power Module SK S D VDSS = 1200V RDSon = 95mΩ max @ Tj = 25°C ID = 103A @ Tc = 25...
Datasheet	APTM120UM95F-ALN PDF File

Overview

APTM120UM95F-AlN Single Switch MOSFET Power Module SK S D VDSS = 1200V RDSon = 95mΩ max @ Tj = 25°C ID = 103A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile G DK www.
DataSheet4U.
com DK S D SK G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C mJ These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1–6 APTM120UM95F–AlN Rev 0 July, 2004 Tc = 25°C Max ratings 1200 103 77 412 ±30 95 2272 25 50 3000 Unit V A V mΩ W A APTM120UM95F-AlN All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 2mA Min 1200 VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25°C T j = 125°C Typ Max 0.
6 3 95 5 ±500 Unit V mA mΩ V nA VGS = 10V, ID = 51.
5A VGS = VDS, ID = 15mA VGS = ±30 V, VDS = 0V 3 Dynamic Characteristics Symbol Ciss Coss Crss...

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APTM120UM95F-ALN MOSFET Power Module - Advanced Power Technology

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