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APTM20DHM16T

Advanced Power Technology
Part Number APTM20DHM16T
Manufacturer Advanced Power Technology
Description MOSFET Power Module
Published Jul 7, 2007
Detailed Description APTM20DHM16T Asymmetrical - Bridge MOSFET Power Module VBUS VBUS SENSE Q1 CR3 VDSS = 200V RDSon = 16mW max @ Tj = 25°C ...
Datasheet PDF File APTM20DHM16T PDF File

APTM20DHM16T
APTM20DHM16T

Overview
APTM20DHM16T Asymmetrical - Bridge MOSFET Power Module VBUS VBUS SENSE Q1 CR3 VDSS = 200V RDSon = 16mW max @ Tj = 25°C ID = 104A @ Tc = 25°C Application · · · Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives G1 S1 OUT1 OUT2 Q4 Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration CR2 G4 0/VBU S SENSE S4 0/VBU S NTC2 NT C1 · · · · www.
DataSheet4U.
com VBUS SENSE G4 S4 OUT2 Benefits · · · · · Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile VBUS 0/VBUS OUT1 S1 G1 0/VBUS SENSE NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc= 25°C Tc = 80°C Max ratings 200 104 77 416 ±30 16 390 100 50 3000 Unit V A V mW W A mJ Tc = 25°C These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1–6 APTM20DHM16T – Rev 2 May, 2004 APTM20DHM16T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 250µA VGS = 0V,VDS= 200V VGS = 0V,VDS= 160V Tj = 25°C Tj = 125°C Min 2...


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