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APTM50AM35FT

Advanced Power Technology
Part Number APTM50AM35FT
Manufacturer Advanced Power Technology
Description MOSFET Power Module
Published Jul 7, 2007
Detailed Description APTM50AM35FT Phase leg MOSFET Power Module VBUS Q1 NTC2 VDSS = 500V RDSon = 35mW max @ Tj = 25°C ID = 99A @ Tc = 25°C A...
Datasheet PDF File APTM50AM35FT PDF File

APTM50AM35FT
APTM50AM35FT

Overview
APTM50AM35FT Phase leg MOSFET Power Module VBUS Q1 NTC2 VDSS = 500V RDSon = 35mW max @ Tj = 25°C ID = 99A @ Tc = 25°C Application · Welding converters · Switched Mode Power Supplies · Uninterruptible Power Supplies Features · Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged · Kelvin source for easy drive · Very low stray inductance - Symmetrical design - Lead frames for power connections · Internal thermistor for temperature monitoring · High level of integration Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Low profile G1 S1 OUT Q2 G2 S2 0/VBUS NTC1 www.
DataSheet4U.
com G2 S2 OUT VBUS 0/VBUS OUT S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 500 99 74 396 ±30 35 781 51 50 3000 Unit V A V mW W A mJ Tc = 25°C These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1–6 APTM50AM35FT – Rev 1 May, 2004 APTM50AM35FT All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 375µA VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min 500 Tj = 25°C Tj = 125°C 3 Typ Max 375 1500 35 5 ±150 Unit V µA ...


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