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APTM50DHM75T

Advanced Power Technology
Part Number APTM50DHM75T
Manufacturer Advanced Power Technology
Description MOSFET Power Module
Published Jul 7, 2007
Detailed Description APTM50DHM75T Asymmetrical - Bridge MOSFET Power Module VBUS VBUS SENSE Q1 CR3 VDSS = 500V RDSon = 75mW max @ Tj = 25°C ...
Datasheet PDF File APTM50DHM75T PDF File

APTM50DHM75T
APTM50DHM75T

Overview
APTM50DHM75T Asymmetrical - Bridge MOSFET Power Module VBUS VBUS SENSE Q1 CR3 VDSS = 500V RDSon = 75mW max @ Tj = 25°C ID = 46A @ Tc = 25°C Application · Welding converters · Switched Mode Power Supplies · Switched Reluctance Motor Drives Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged · Kelvin source for easy drive · Very low stray inductance - Symmetrical design - Lead frames for power connections · Internal thermistor for temperature monitoring · High level of integration Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Low profile G1 S1 OUT1 OUT2 Q4 CR2 G4 0/VBUS SENSE S4 0/VBUS NTC2 NTC1 www.
DataSheet4U.
com VBUS SENSE G4 S4 OUT2 VBUS 0/VBUS OUT1 S1 G1 0/VBUS SENSE NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 500 46 34 184 ±30 75 357 46 50 2500 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1–6 APTM50DHM75T – Rev 2 May, 2004 Tc = 25°C APTM50DHM75T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 250µA VGS = 0V,VDS= 500V VGS = 0V,VDS= 400V Tj = 25°C Tj = 125°C Min 500 Typ ...


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