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APTM50DSKM65T3

Advanced Power Technology
Part Number APTM50DSKM65T3
Manufacturer Advanced Power Technology
Description MOSFET Power Module
Published Jul 7, 2007
Detailed Description APTM50DSKM65T3 Dual Buck chopper MOSFET Power Module 13 14 Q1 18 22 19 CR1 23 8 CR2 7 10 Q2 11 VDSS = 500V RDSon = 65mΩ...
Datasheet PDF File APTM50DSKM65T3 PDF File

APTM50DSKM65T3
APTM50DSKM65T3

Overview
APTM50DSKM65T3 Dual Buck chopper MOSFET Power Module 13 14 Q1 18 22 19 CR1 23 8 CR2 7 10 Q2 11 VDSS = 500V RDSon = 65mΩ max @ Tj = 25°C ID = 51A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single buck of twice the current capability 29 15 30 31 R1 32 16 www.
DataSheet4U.
com 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1–6 APTM50DSKM65T3 – Rev 0 Max ratings 500 51 38 204 ±30 65 390 51 50 3000 Unit V September, 2004 A V mΩ W A APTM50DSKM65T3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current ...


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