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APTM50DUM19

Advanced Power Technology
Part Number APTM50DUM19
Manufacturer Advanced Power Technology
Description MOSFET Power Module
Published Jul 7, 2007
Detailed Description APTM50DUM19 Dual common source MOSFET Power Module VDSS = 500V RDSon = 19mW max @ Tj = 25°C ID = 163A @ Tc = 25°C Appli...
Datasheet PDF File APTM50DUM19 PDF File

APTM50DUM19
APTM50DUM19

Overview
APTM50DUM19 Dual common source MOSFET Power Module VDSS = 500V RDSon = 19mW max @ Tj = 25°C ID = 163A @ Tc = 25°C Application · AC Switches · Switched Mode Power Supplies · Uninterruptible Power Supplies Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged · Kelvin source for easy drive · Very low stray inductance - Symmetrical design - M5 power connectors · High level of integration Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Low profile www.
DataSheet4U.
com G1 S1 D1 S D2 S2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 500 163 122 652 ±30 19 1136 46 50 2500 Unit V A V mW W A mJ Tc = 25°C These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1–6 APTM50DUM19 – Rev 2 April, 2004 APTM50DUM19 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 500µA VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min 500 Tj = 25°C Tj = 125°C 3 Typ Max 200 1000 19 5 ±200 Unit V µA mW V nA VGS = 10V, ID = 81.
5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer C...


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