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APTM50HM35F

Advanced Power Technology
Part Number APTM50HM35F
Manufacturer Advanced Power Technology
Description MOSFET Power Module
Published Jul 7, 2007
Detailed Description APTM50HM35F Full - Bridge MOSFET Power Module VDSS = 500V RDSon = 35mW max @ Tj = 25°C ID = 99A @ Tc = 25°C Application ...
Datasheet PDF File APTM50HM35F PDF File

APTM50HM35F
APTM50HM35F

Overview
APTM50HM35F Full - Bridge MOSFET Power Module VDSS = 500V RDSon = 35mW max @ Tj = 25°C ID = 99A @ Tc = 25°C Application · · · · Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features · Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration · · www.
DataSheet4U.
com OUT1 G1 S1 VBUS 0/VBUS G2 S2 · Benefits S3 G3 OUT2 S4 G4 · · · · Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 500 99 74 396 ±30 35 781 51 50 3000 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1–6 APTM50HM35F– Rev 1 May, 2004 Tc = 25°C APTM50HM35F All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 375µA VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min 500 Tj = 25°C Tj = 125°C 3 Typ Max 375 1500 35 5 ±150 Unit V µA mW V nA VGS = 10V, ID = 49.
5A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Ch...


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