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APTM50SKM38T

Advanced Power Technology
Part Number APTM50SKM38T
Manufacturer Advanced Power Technology
Description MOSFET Power Module
Published Jul 7, 2007
Detailed Description APTM50SKM38T Buck chopper MOSFET Power Module VBUS Q1 NT C2 VDSS = 500V RDSon = 38mW max @ Tj = 25°C ID = 90A @ Tc = 25...
Datasheet PDF File APTM50SKM38T PDF File

APTM50SKM38T
APTM50SKM38T

Overview
APTM50SKM38T Buck chopper MOSFET Power Module VBUS Q1 NT C2 VDSS = 500V RDSon = 38mW max @ Tj = 25°C ID = 90A @ Tc = 25°C Application · AC and DC motor control · Switched Mode Power Supplies Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged · Kelvin source for easy drive · Very low stray inductance - Symmetrical design - Lead frames for power connections · Internal thermistor for temperature monitoring · High level of integration Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Low profile G1 S1 OUT 0/VBUS SENSE 0/VBUS NTC1 www.
DataSheet4U.
com 0/VBUS SENSE OUT VBUS 0/VBUS OUT S1 G1 0/VBUS SENSE NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 500 90 67 360 ±30 38 694 46 50 2500 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1–6 APTM50SKM38T – Rev 2 May, 2004 Tc = 25°C APTM50SKM38T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 375µA VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min 500 Tj = 25°C Tj = 125°C Typ Max 150 750 38 5 ±150 Unit V µA mW V nA VGS = 10V, ID = 45A VGS = VDS, ...


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