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NE5510279A

NEC
Part Number NE5510279A
Manufacturer NEC
Description 3.5V OPERATION SILICON RF POWER MOSFET
Published Jul 9, 2007
Detailed Description 3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 NE5510279A TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 32 ...
Datasheet PDF File NE5510279A PDF File

NE5510279A
NE5510279A


Overview
3.
5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 NE5510279A TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.
5 V, IDQ = 400 mA, f = 1.
8 GHz, PIN = 25 dBm • HIGH POWER ADDED EFFICIENCY: 45% TYP at VDS = 3.
5 V, IDQ = 400 mA, f = 1.
8 GHz, PIN = 25 dBm • HIGH LINEAR GAIN: 10 dB TYP at VDS = 3.
5 V, IDQ = 400 mA, f = 1.
8 GHz, PIN = 10 dBm • SURFACE MOUNT PACKAGE: 5.
7 x 5.
7 x 1.
1 mm MAX • SINGLE SUPPLY: 2.
8 to 6.
0 V 0.
9 ± 0.
2 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A 4.
2 Max 1.
5 ± 0.
2 Source Source Gate 5.
7 Max 0.
6 ± 0.
15 Drain 0.
8 ± 0.
15 4.
4 Max Gate 1.
0 Max Drain 1.
2 Max 0.
8 Max 3.
6 ± 0.
2 0.
4 ± 0.
15 5.
7 Max 0.
2 ± 0.
1 Bottom View DESCRIPTION The NE5510279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.
5 V GSM1800 handsets.
Dies are manufactured using NEC's NEWMOS technology (NEC's 0.
6 µ m WSi gate lateral MOSFET) and housed in a surface mount package.
This device can deliver 32 dBm output power with 45% power added efficiency at 1.
8 GHz under the 3.
5 V supply voltage, or can deliver 31 dBm output power at 2.
8 V by varying the gate voltage as a power control function.
APPLICATIONS • DIGITAL CELLULAR PHONES • OTHERS ELECTRICAL CHARACTERISTICS (TA PART NUMBER PACKAGE OUTLINE SYMBOLS IGSS IDSS VTH gm RDS(ON) BVDSS CHARACTERISTICS Gate to Source Leakage Current Drain to Source Leakage Current Gate Threshold Voltage Transconductance Drain to Source On Resistance Drain to Source Breakdown Voltage = 25°C) NE5510279A 79A UNITS nA nA V S V MIN 1.
0 20 TYP 1.
35 1.
50 0.
27 24 MAX 100 100 2.
0 - TEST CONDITIONS VGSS = 6.
0 V VDSS = 8.
5 V VDS = 4.
8 V, IDS = 1 mA VDS = 4.
8 V, IDS1 = 500 mA, IDS2 = 700 mA VGS = 6.
0 V, VDS = 0.
5 V IDSS = 10 A California Eastern Laboratories NE5510279A PERFORMANCE SPECIFICATIONS (Peak measurement at Duty Cycle 1/8, 4.
6 mS period, TA = 25˚C) SYMBOLS GL POUT(1) IOP(1) CHARACTERISTICS Linear Gain Output Power Operating Current Power Added Efficiency Max...


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