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IRLI640G

International Rectifier
Part Number IRLI640G
Manufacturer International Rectifier
Description Power MOSFET
Published Jul 10, 2007
Detailed Description Previous Datasheet Index Next Data Sheet PD - 9.1237 IRLI640G HEXFET® Power MOSFET Isolated Package High Voltage Iso...
Datasheet PDF File IRLI640G PDF File

IRLI640G
IRLI640G

Overview
Previous Datasheet Index Next Data Sheet PD - 9.
1237 IRLI640G HEXFET® Power MOSFET Isolated Package High Voltage Isolation = 2.
5KVRMS Sink to Lead Creepage Dist.
4.
8mm Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
VDSS = 200V RDS(on) = 0.
18Ω ID = 9.
9A www.
DataSheet4U.
com Absolute Maximum Ratings Parameter ID @ TC = 25°C...


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