DatasheetsPDF.com

MGFC47A4450

Part Number	MGFC47A4450
Manufacturer	Mitsubishi Electric
Description	C band internally matched power GaAs FET
Published	Jul 10, 2007
Detailed Description	< C band internally matched power GaAs FET > MGFC47A4450 4.4 – 5.0 GHz BAND / 50W DESCRIPTION The MGFC47A4450 is an inte...
Datasheet	MGFC47A4450 PDF File

Overview

< C band internally matched power GaAs FET > MGFC47A4450 4.
4 – 5.
0 GHz BAND / 50W DESCRIPTION The MGFC47A4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.
4 – 5.
0 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Class AB operation Internally matched to 50(ohm) system  High output power P1dB=50W (TYP.
) @f=4.
4 – 5.
0GHz  High power gain GLP=10.
5dB (TYP.
) @f=4.
4 – 5.
0GHz  High power added efficiency PAE=40% (TYP.
) @f=4.
4 – 5.
0GHz APPLICATION  Radio Link 2MIN .
17 .
4 +/-0.
2 8.
0+/-0.
2 2.
4 2 MIN.
OUTLINE DRAWING Unit : millimeters 2 4+/-0.
3 (1) (2 ) (3) 0 .
7 +/-0.
15 20 .
4 +/-0.
2 1 6.
7 1.
3 15.
8 4.
7 m ax.
2 .
3 +/-0 .
2 0.
1+/-0.
05 RECOMMENDED BIAS CONDITIONS  VDS=10V  ID=9.
8A  RG=10ohm Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -20 VGSO Gate to source breakdown voltage -10 IGR Reverse gate current ...

Similar Datasheet

MGFC47A4450 C band internally matched power GaAs FET - Mitsubishi Electric

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)