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RA08N1317M

Mitsubishi Electric
Part Number RA08N1317M
Manufacturer Mitsubishi Electric
Description RoHS Compliance
Published Jul 11, 2007
Detailed Description MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M BLOCK DIAGRAM 2 3 R...
Datasheet PDF File RA08N1317M PDF File

RA08N1317M
RA08N1317M

Overview
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M BLOCK DIAGRAM 2 3 RoHS Compliance , 135-175MHz 8W 9.
6V, 2 Stage Amp.
For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.
6-volt portable radios that operate in the 135- to 175-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.
Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB.
The output power and drain current increase as the gate voltage increases.
With a gate voltage around 2.
5V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 3V (typical) and 3.
5V (maximum).
At VGG=3.
5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the...


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