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K7I163682B

Samsung semiconductor
Part Number K7I163682B
Manufacturer Samsung semiconductor
Description (K7I163682B / K7I161882B) 1Mx18-bit DDRII CIO b2 SRAM
Published Jul 14, 2007
Detailed Description K7I163682B K7I161882B Document Title 512Kx36 & 1Mx18 DDRII CIO b2 SRAM 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM Revis...
Datasheet PDF File K7I163682B PDF File

K7I163682B
K7I163682B


Overview
K7I163682B K7I161882B Document Title 512Kx36 & 1Mx18 DDRII CIO b2 SRAM 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM Revision History Rev.
No.
0.
0 0.
1 History 1.
Initial document.
1.
Add the speed bin (-33, -30) 2.
Delete the speed bin (-25, -13) 1.
Change the Boundary scan exit order.
2.
Correct the Overshoot and Undershoot timing diagram.
1.
Add the speed bin (-25) 1.
Correct the JTAG ID register definition 2.
Correct the AC timing parameter (delete the tKHKH Max value) 1.
Change the Maximum Clock cycle time.
2.
Correct the 165FBGA package ball size.
1.
Add the power up/down sequencing comment.
2.
Update the DC current parameter (Icc and Isb).
3.
Change the Max.
speed bin from -33 to -30.
1.
...



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