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K7I161882B

Samsung semiconductor
Part Number K7I161882B
Manufacturer Samsung semiconductor
Description (K7I163682B / K7I161882B) 1Mx18-bit DDRII CIO b2 SRAM
Published Jul 14, 2007
Detailed Description K7I163682B K7I161882B Document Title 512Kx36 & 1Mx18 DDRII CIO b2 SRAM 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM Revis...
Datasheet PDF File K7I161882B PDF File

K7I161882B
K7I161882B

Overview
K7I163682B K7I161882B Document Title 512Kx36 & 1Mx18 DDRII CIO b2 SRAM 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM Revision History Rev.
No.
0.
0 0.
1 History 1.
Initial document.
1.
Add the speed bin (-33, -30) 2.
Delete the speed bin (-25, -13) 1.
Change the Boundary scan exit order.
2.
Correct the Overshoot and Undershoot timing diagram.
1.
Add the speed bin (-25) 1.
Correct the JTAG ID register definition 2.
Correct the AC timing parameter (delete the tKHKH Max value) 1.
Change the Maximum Clock cycle time.
2.
Correct the 165FBGA package ball size.
1.
Add the power up/down sequencing comment.
2.
Update the DC current parameter (Icc and Isb).
3.
Change the Max.
speed bin from -33 to -30.
1.
Change the ISB1.
Speed Bin -30 -25 -20 -16 1.
0 2.
0 1.
Final spec release 1.
Delete the x8 Org.
2.
Delete the 300MHz speed bin 1.
Add the 300MHz speed bin 1.
Change the stand-by current(ISB1) before after Isb1 -30 : 230 260 -25 : 210 240 -20 : 190 220 -16 : 170 200 From 200 180 160 140 To 230 210 19...


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