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NBB-302

RF Micro Devices
Part Number NBB-302
Manufacturer RF Micro Devices
Description CASCADABLE BROADBAND GaAs MMIC AMPLIFIER
Published Jul 16, 2007
Detailed Description NBB-302 0 RoHS Compliant & Pb-Free Product Typical Applications • Narrow and Broadband Commercial and Military Radio Des...
Datasheet PDF File NBB-302 PDF File

NBB-302
NBB-302


Overview
NBB-302 0 RoHS Compliant & Pb-Free Product Typical Applications • Narrow and Broadband Commercial and Military Radio Designs • Linear and Saturated Amplifiers Product Description The NBB-302 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs.
This 50 Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications.
Designed with an external bias resistor, the NBB-302 provides flexibility and stability.
The NBB-302 is packaged in a low-cost, surface-mount ceramic package, providing ease of assembly for highvolume tape-and-reel requirements.
It is available in either packaged or chip (NBB-300-D) form, where its gold metallization is ideal for hybrid circuit designs.
www.
DataSheet4U.
com 2.
94 min 3.
28 max Pin 1 Indicator 0.
025 min 0.
125 max Pin 1 Indicator RF OUT Ground RF IN CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/ LMDS/UNII/VSAT/WLAN/Cellular/DWDM) 0.
50 nom 0.
50 nom 1.
00 min 1.
50 max N3 Lid ID 1.
70 min 1.
91 max 2.
39 min 2.
59 max Ground 0.
38 nom 0.
37 min 0.
63 max 0.
98 min 1.
02 max All Dimensions in Millimeters Notes: 1.
Solder pads are coplanar to within ±0.
025 mm.
2.
Lid will be centered relative to frontside metallization with a tolerance of ±0.
13 mm.
3.
Mark to include two characters and dot to reference pin 1.
Optimum Technology Matching® Applied Si BJT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: MPGA, Bowtie, 3x3, Ceramic 9InGaP/HBT Si Bi-CMOS Features • Reliable, Low-Cost HBT Design • 12.
0dB Gain, +13.
7dBm P1dB@2GHz • High P1dB of +14.
0dBm@6.
0GHz and +11.
0dBm@14.
0GHz Pin 1 Indicator 1 RF OUT 8 Ground 7 6 5 9 4 RF IN 2 3 Ground • Single Power Supply Operation • 50 Ω I/O Matched for High Freq.
Use Ordering Information Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz NBB-302-T...



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