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NTMFS4833N

ON Semiconductor
Part Number NTMFS4833N
Manufacturer ON Semiconductor
Description Power MOSFET
Published Jul 19, 2007
Detailed Description NTMFS4833N MOSFET – Power, Single, N-Channel, SO-8FL 30 V, 191 A Features • Low RDS(on) to Minimize Conduction Losses ...
Datasheet PDF File NTMFS4833N PDF File

NTMFS4833N
NTMFS4833N

Overview
NTMFS4833N MOSFET – Power, Single, N-Channel, SO-8FL 30 V, 191 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices Applications • Refer to Application Note AND8195/D • CPU Power Delivery • DC−DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJA (Note 1) TA = 25°C ID TA = 85°C 28 A 20.
5 Power Dissipation RqJA (Note 1) TA = 25°C PD 2.
7 W Continuous Drain TA = 25°C ID Current RqJA (Note 2) Steady TA = 85°C State Power Dissipation TA = 25°C PD RqJA (Note 2) 16 A 12 1.
1 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID TC = 85°C 191 A 138 Power Dissipation RqJC (Note 1) TC = 25°C PD 113.
6 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 288 A Operat...


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