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MA4AGSBP907

Tyco Electronics
Part Number MA4AGSBP907
Manufacturer Tyco Electronics
Description AlGaAs Solder Bump Flip-Chip PIN Diode
Published Jul 20, 2007
Detailed Description AlGaAs Solder Bump Flip-Chip PIN Diode Features • Low Series Resistance, 4 Ω • Ultra Low Capacitance, 25 fF • High Switc...
Datasheet PDF File MA4AGSBP907 PDF File

MA4AGSBP907
MA4AGSBP907


Overview
AlGaAs Solder Bump Flip-Chip PIN Diode Features • Low Series Resistance, 4 Ω • Ultra Low Capacitance, 25 fF • High Switching Cutoff Frequency, 40 GHz • 2 Nanosecond Switching Speed • Can be Driven by Buffered TTL • Silicon Nitride Passivation • Polyimide Scratch Protection • Solderable Bump Die Attach Description MA4AGSBP907 Rev 2.
0 Mounting Side with Solder Bumps M/A-COM's MA4AGSBP907 is an Aluminum Gallium Arsenide Flip-Chip PIN diode with solder bumps.
These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics.
The diodes exhibit an extremely low RC Product, ( 0.
1 ps ) and 2 nS switching characteristics.
The useable frequency range is 100 MHz to 40 GHz.
They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection.
The protective coatings prevent damage to the junction and the anode airbridge during handling and circuit attachment.
Aplications www.
DataSheet4U.
com The 25 fF capacitance of the MA4AGSBP907 allows use through mmwave switch and switched phase shifter applications.
This diode is designed for use in pulsed or CW applications, where single digit nS switching speed is required.
For surface mount assembly, the low capacitance of the MA4AGSBP907 makes it ideal for use in microwave multithrow switch assemblies, where the series capacitance of each “off” port adversely loads the input and affects VSWR.
Electrical Specifications and RF Data at TA = 25 °C Parameters and Test Conditions Symbol Units 1 MHz & DC Specifications Min Total Capacitance at –10 V Forward Resistance at +10 mA Forward Voltage at +10 mA Reverse Breakdown Voltage at -10 uA3 Switching Speed ( 10 to 90% RF Voltage )4 & ( 90 to 10% RF Voltage )4 Ct Rs Vf Vb Trise Tfall pF Ω Volts Volts nS Typ.
0.
025 5.
2 1.
33 -50 Max 0.
030 7.
0 1.
45 -45 10 GHz Reference 1,2 Data Min Typ.
0.
025 4.
2 Max.
2 Notes: 1.
Capacitance is determined by measuring Single Series Diode Isolation...



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