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PD55008-E

STMicroelectronics
Part Number PD55008-E
Manufacturer STMicroelectronics
Description RF POWER transistor
Published Jul 20, 2007
Detailed Description PD55008-E PD55008S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General featu...
Datasheet PDF File PD55008-E PDF File

PD55008-E
PD55008-E

Overview
PD55008-E PD55008S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 8W with 17dB gain @ 500MHz / 12.
5V New RF plastic package PowerSO-10RF (formed lead) Description The PD55008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 12 V in common source mode at frequencies up to 1 GHz.
PD55008 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, Power...


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