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HVL147M

Renesas Technology
Part Number HVL147M
Manufacturer Renesas Technology
Description Silicon Epitaxial Trench Pin Diode
Published Jul 22, 2007
Detailed Description HVL147M Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0394-0300 Rev.3.00 Jan 20, 2006 Features • • • •...
Datasheet PDF File HVL147M PDF File

HVL147M
HVL147M

Overview
HVL147M Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0394-0300 Rev.
3.
00 Jan 20, 2006 Features • • • • Adopting the trench structure improves low capacitance.
(C = 0.
31 pF max) Low forward resistance.
(rf = 1.
5 Ω max) Low operation current.
Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design.
Ordering Information Type No.
HVL147M Laser Mark N Package Name TEFP Package Code PUSF0002ZA-A Pin Arrangement Cathode mark Mark com 1 • N 2 1.
Cathode 2.
Anode Rev.
3.
00 Jan 20, 2006 page 1 of 4 HVL147M Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperatu...


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