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MA4E2513-1289

Tyco Electronics
Part Number MA4E2513-1289
Manufacturer Tyco Electronics
Description Silicon Schottky Diodes
Published Jul 23, 2007
Detailed Description SURMOUNTTM Low Barrier Tee “0301” Footprint Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Ind...
Datasheet PDF File MA4E2513-1289 PDF File

MA4E2513-1289
MA4E2513-1289

Overview
SURMOUNTTM Low Barrier Tee “0301” Footprint Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Extremely Small “0301” (1000 x 300um) Footprint • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide Scratch Protection • Reliable, Multilayer Metalization with a Diffusion • Barrier, 100% Stabilization Bake (300°C, 16 hours) • Lower Susceptibility to ESD Damage MA4E2513-1289 Series V1 The MA4E2513L-1289 SurMount Low Barrier Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters.
The HMIC construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding Surmount diode, which can be connected to a hard or soft substrate circuit with solder.
Description and Applications The MA4E2513L-1289 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.
HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, microstrip transmission medium.
The combination of silicon and glass allows HMIC devices to have excellent loss and power www.
DataSheet4U.
com dissipation characteristics in a low profile, reliable device.
The Surmount Schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip.
The SurMount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower cost performance solution to conventional devices.
They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes.
The multi-layer ...


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