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BA01232

Mitsubishi Electric Semiconductor
Part Number BA01232
Manufacturer Mitsubishi Electric Semiconductor
Description GaAs RF amplifier designed
Published Jul 24, 2007
Detailed Description www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR Preliminary Specifications are subject to change without notice. BA01232...
Datasheet PDF File BA01232 PDF File

BA01232
BA01232


Overview
www.
DataSheet4U.
com MITSUBISHI SEMICONDUCTOR Preliminary Specifications are subject to change without notice.
BA01232 HBT HYBRID IC OUTLINE DRAWING Unit : millimeters DESCRIPTION The BA01232 is GaAs RF amplifier designed for W-CDMA hand-held phone.
‡@ FEATURES Low voltage Vcc=3.
5V High power Po=26.
5dBm @1920∼1980MHz High gain Gp=27.
5dB @Po=26.
5dBm 2stage amplifier Internal input and output matching Small size package 4x4x1.
2mm ‡E ‡D ‡C 4.
00 1.
40 1.
2 ‡@ Pin ‡C Pout ‡A Vc1 ‡D Vcb ‡B Vc2 ‡E Vref 4.
00 ‡A ‡B APPLICATION W-CDMA(UTRA/FDD) mobile transmitter (UE Power Class 3).
ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Vcc Pin Tc(op) Tstg Parameter Supply voltage of HPA Input power Operatin...



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