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MAAPGM0027-DIE

Tyco Electronics
Part Number MAAPGM0027-DIE
Manufacturer Tyco Electronics
Description Power Amplifier
Published Jul 25, 2007
Detailed Description www.DataSheet4U.com 2.0-4.0 GHz 1W Power Amplifier Features ♦ ♦ ♦ ♦ 1 Watt Saturated Output Power Level Variable Drain ...
Datasheet PDF File MAAPGM0027-DIE PDF File

MAAPGM0027-DIE
MAAPGM0027-DIE

Overview
www.
DataSheet4U.
com 2.
0-4.
0 GHz 1W Power Amplifier Features ♦ ♦ ♦ ♦ 1 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation MSAG™ MESFET Process Proven Manufacturability and Reliability No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility MAAPGM0027-DIE RO-P-DS-3014 B Preliminary Information Description The MAAPGM0027-Die is a 2-stage power amplifier with on-chip bias networks.
This product is fully matched to 50 ohms on both the input and output.
It can be used as a power amplifier stage or as a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes.
The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging.
Primary Applications ♦ Wireless Local Loop 3.
4-3.
6 GHz ♦ MMDS 2.
5-2.
7 GHz ♦ Radar Electrical Characteristics: TB = 40°C1, Z0 = 50 Ω, VDD = 8V, IDQ ≈ 230mA2, Pin = 10 dBm Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR Output VSWR Gate Supply Current Drain Supply Current Output Third Order Intercept 3 Order Intermodulation Distortion Single Carrier Level = 21 dBm 5th Order Intermodulation Distortion Single Carrier Level = 21 dBm Noise Figure 2 nd rd rd Symbol f POUT PAE P1dB G VSWR VSWR IGG IDD OTOI IM3 IM5 NF 2f 3f Typical 2.
0-4.
0 30 35 29 22 1.
8:1 1.
4:1 <2 < 350 37 -15 -39 6 -15 -25 Units GHz dBm % dBm dB mA mA dBm dBm dBm dB dBc dBc Harmonic 3 Harmonic 1 1.
2.
...


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