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UF2840P

Tyco Electronics
Part Number UF2840P
Manufacturer Tyco Electronics
Description RF MOSFET Power Transistor
Published Jul 30, 2007
Detailed Description www.DataSheet4U.com an =y FE AMP comDanv RF MOSFET Power 100 - 500 MHz Features N-Channel Enhancement Mode Device DMOS...
Datasheet PDF File UF2840P PDF File

UF2840P
UF2840P

Overview
www.
DataSheet4U.
com an =y FE AMP comDanv RF MOSFET Power 100 - 500 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor .
.
Transistor, 4OW, 28V UF284OP Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units i D i 627 i 6.
33 1 247 1 257 1 H J ] 1 1.
40 292 1 I 165 3.
M 1 I 055 115 1 I .
D65 325 Electrical Characteristics at 25°C input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance * Per Side C ISS C oss C RSS GP qD - ) 45 30 a pF pF PF dB % - Vg28.
0 V,,=28.
0 V,,=28.
0 V,,=28.
0 V,,=28.
0 V,,=28.
0 V, F=l .
O MHz’ V, F=l .
O MHz’ V, F=l .
O MHz’ V, 1,,=500.
0 mA, P,fi40.
0 V, 1,,=500.
0 mA, Po,,=40.
0 V, 1,,=500.
0 mA, P,,g40.
0 W.
F=500 MHz W, F=500 MHz W, F=500 MHz 10 50 - 2O:l VSWR-T Specifications Subject to Change Without Notice.
MIA-COM, Inc.
RF MOSFET Power Transistor, 4OW, 28V U F284OP v2.
00 Typical Broadband Performance Curves CAPACITANCES 40 vs VOLTAGE 50 POWER OUTPUT vs VOLTAGE P,,=3.
0 W I,,=500 mA F=500 MHz Fz1.
0 MHz g f L 2 5 10 55 4o 30 20 E C RSS 10 / 0 15 "2, (") 20 25 30 5 10 15 20 25 30 35 5 10 v,, (“) GAIN vs FREQUENCY 30 v.
,,=28 EFFICIENCY 65 - vs FREQUENCY mA P,,,=40 W V I,,=500 mA PO,,=40 W V,,=28 V I,,=500 6 c kii 55.
c J 100 200 3w 400 500 50 .
loo 200 3430 400 500 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT 60 vs POWER INPUT mA VD,=28 V I,,=500 1 J 0.
1 0.
25 1 2 2.
5 POWER INPUT (W) Specifications Subject to Change Without Notice.
M/A-COM, inc.
RF MOSFET Power Transistor, 4OW, 28V UF284OP v2.
00 Typical Device Impedance Frequency 100 300 500 (MHz) 4, (OHMS) 6.
0 - j 20.
0 2.
5 - j 5.
5 4.
0 + j 3.
0 V,,=28 V, I,,=500 mA, P,,,=40.
0 Watts Z LOAD (OHMS) 25.
0 + j 27.
0 13.
0 + j 13.
0 12.
0 + j 5.
0 Z,, is the series equivalent ‘.
T input impedance of the device from gate to gate.
as measured from drain to drain.
...


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