DatasheetsPDF.com

MB84VD22280FA-70

Fujitsu Media Devices
Part Number MB84VD22280FA-70
Manufacturer Fujitsu Media Devices
Description (MB84VD222x0Fx-70) 32M (X16) FLASH MEMORY & 8M (X16) STATIC RAM
Published Jul 30, 2007
Detailed Description www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SR...
Datasheet PDF File MB84VD22280FA-70 PDF File

MB84VD22280FA-70
MB84VD22280FA-70

Overview
www.
DataSheet4U.
com FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 32M (×16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 s FEATURES • Power Supply Voltage of 2.
7 V to 3.
1 V • High Performance 70 ns maximum access time (Flash) 70 ns maximum access time (SRAM) • Operating Temperature –30°C to +85°C • Package 59-ball FBGA (Continued) s PRODUCT LINE UP Part No.
Supply Voltage(V) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) MB84VD22280FA/80FE/90FA/90FE VCCf= 3.
0 V 70 70 30 +0.
1 V –0.
3 V VCCs= 3.
0 V 70 70 35 +0.
1 V –0.
3 V Note: Both VCCf and VCCs must be in recommended operation range when either part is being accessed.
s PACKAGE 59-ball plastic FBGA (BGA-59P-M02) MB84VD22280FA/FE-70/MB84VD22290FA/FE-70 (Continued) — FLASH MEMORY • Simultaneous Read/Write Operations (Dual Bank) • FlexBankTM*1 Bank A : 4 Mbit (8 KB × 8 and 64 KB × 7) Bank B : 12 Mbit (64 KB × 24) Bank C : 12 Mbit (64 KB × 24) Bank D : 4 Mbit (64 KB × 8) Two virtual Banks are chosen from the combination of four physical banks Host system can program or erase in one bank, and then read immediately and simultaneously from the other bank with zero latency between read and write operations.
Read-while-erase Read-while-program • Minimum 100,000 Write/Erase Cycles • Sector Erase Architecture Eight 4K word and sixty-three 32K word sectors in word mode Any combination of sectors can be concurrently erased.
Also supports full chip erase.
• Boot Code Sector Architecture MB84VD22280: Top sector MB84VD22290: Bottom sector • Embedded EraseTM*2 Algorithms Automatically pre-programs and erases the chip or any sector • Embedded ProgramTM*2 Algorithms Automatically writes and verifies data at specified address • Data Polling and Toggle Bit Feature for Detection of Program or Erase Cycle Completion • Ready-Busy Output (RY/BY) Hardware method for detection of program ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)