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DTB543ZE

Rohm
Part Number DTB543ZE
Manufacturer Rohm
Description (DTB543ZE / DTB543ZM) Digital transistors
Published Jul 31, 2007
Detailed Description www.DataSheet4U.com DTB543ZE / DTB543ZM Transistors -500mA / -12V Low VCE (sat) Digital transistors (with built-in res...
Datasheet PDF File DTB543ZE PDF File

DTB543ZE
DTB543ZE

Overview
www.
DataSheet4U.
com DTB543ZE / DTB543ZM Transistors -500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors) DTB543ZE / DTB543ZM zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm) DTB543ZE 1.
6 0.
3 (3) 0.
8 1.
6 0.
7 0.
55 zFeature 1) VCE (sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation, making the device design easy.
zStructure PNP epitaxial plannar silicon transistor (Resistor built-in type) 0.
2 0.
5 0.
5 1.
0 EMT3 JEITA No.
(SC-75A) JEDEC No.
0.
2 0.
15 0.
1Min.
(2) (1) (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : Y13 DTB543ZM 0.
2 0.
8 1.
2 1.
2 0.
32 (3) 0.
2 0.
22 (1)(2) 0.
4 0.
4 0.
8 0.
13 0.
5 (1) IN (2) GND (3) OUT VMT3 Each lead has same dimensions Abbreviated symbol : Y13 zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Collector current Power dissipation Junction temperature Storage temperature ∗1 ∗2 zPackaging specifications Package EMT3 Taping VMT3 Taping Symbol VCC VIN IC (max) PD Tj Tstg Limits DTB543ZE DTB543ZM −12 −12 to +5 −500 150 150 −55 to +150 Unit V V mA mW C C Part No.
DTB543ZE DTB543ZM Packaging type Code Basic ordering unit (pieces) TL 3000 T2L 8000 − − ∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency ∗ Input resistance Resistance ratio ∗ Characteristics of built-in transistor.
zEquivalent circuit Max.
−0.
3 − −300 −1.
4 −0.
5 − − 6.
11 12 Unit V mV mA...


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