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DTB743XM

Rohm
Part Number DTB743XM
Manufacturer Rohm
Description (DTB743XE / DTB743XM) Digital transistors
Published Jul 31, 2007
Detailed Description www.DataSheet4U.com DTB743XE / DTB743XM Transistors -200mA / -30V Low VCE (sat) Digital transistors (with built-in res...
Datasheet PDF File DTB743XM PDF File

DTB743XM
DTB743XM

Overview
www.
DataSheet4U.
com DTB743XE / DTB743XM Transistors -200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors) DTB743XE / DTB743XM zApplications Inverter, Interface, Driver zFeature 1) VCE(sat) is lower than the conventional products.
2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation, making the device design easy.
zStructure PNP epitaxial plannar silicon transistor (Resistor built-in type) zExternal dimensions (Unit : mm) DTB743XE 1.
6 0.
3 (3) 0.
8 1.
6 0.
7 0.
55 0.
2 0.
5 0.
5 1.
0 EMT3 JEITA No.
(SC-75A) JEDEC No.
0.
2 0.
15 0.
1Min.
(2) (1) (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : M33 DTB743XM 0.
2 0.
8 1.
2 1.
2 0.
32 (3) 0.
2 0.
22 (1)(2) 0.
4 0.
4 0.
8 0.
13 0.
5 (1) IN (2) GND (3) OUT VMT3 Each lead has same dimensions Abbreviated symbol : M33 zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Collector current Power dissipation Junction temperature Storage temperature ∗1 ∗2 zPackaging specifications Limits Package Unit V V mA mW C C EMT3 Taping VMT3 Taping Symbol VCC VIN IC (max) PD Tj Tstg DTB743XE DTB743XM −30 −20 to +7 −200 150 150 −55 to +150 Packaging type Code TL 3000 T2L 8000 − Part No.
DTB743XE DTB743XM Basic ordering unit (pieces) − ∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency ∗ Input resistance Resistance ratio ∗ Characteristics of built-in transistor.
zEquivalent circuit Max.
−0.
3 − −300 −1.
4 −0.
5 − − 6.
11 2.
6 Unit V ...


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