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STP17NK40Z

STMicroelectronics
Part Number STP17NK40Z
Manufacturer STMicroelectronics
Description N-CHANNEL Power MOSFET
Published Aug 2, 2007
Detailed Description www.DataSheet4U.com N-CHANNEL 400V - 0.23Ω - 15A TO-220/TO-220FP Zener-Protected SuperMESH™Power MOSFET TYPE STP17NK40Z...
Datasheet PDF File STP17NK40Z PDF File

STP17NK40Z
STP17NK40Z

Overview
www.
DataSheet4U.
com N-CHANNEL 400V - 0.
23Ω - 15A TO-220/TO-220FP Zener-Protected SuperMESH™Power MOSFET TYPE STP17NK40Z STP17NK40ZFP s s s s s s STP17NK40Z - STP17NK40ZFP VDSS 400 V 400 V RDS(on) < 0.
25 Ω < 0.
25 Ω ID 15 A 15 A Pw 150 W 35 W TYPICAL RDS(on) = 0.
23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 1 2 TO-220 TO-220FP DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING ORDERING INFORMATION SALES TYPE STP17NK40Z STP17NK40ZFP MARKING P17NK40Z P17NK40ZFP PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE October 2002 1/10 www.
DataSheet4U.
com STP17NK40Z - STP17NK40ZFP ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT IGS VESD(G-S) dv/dt (1) Viso Tj Tstg Parameter STP17NK40Z Value STP17NK40ZFP Unit V V V 15 (*) 9.
4 (*) 60 (*) 35 0.
28 A A A W W/°C mA V V/ns 2500 V °C °C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (DC) Gate source ESD(HBM-C=100pF, R=1.
5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature -15 9.
4 60 150 1.
2 400 400 ± 30 ± 20 4500 4.
5 -55 to 150 -55 to 150 (l) Pulse width limited by safe operating area (1) I SD ≤15A, di/dt ≤200A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX.
(*) ...


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