DatasheetsPDF.com

LP6836P100

Filtronic Compound Semiconductors
Part Number LP6836P100
Manufacturer Filtronic Compound Semiconductors
Description Packaged 0.25W Power PHEMT
Published Mar 22, 2005
Detailed Description Filtronic Solid State FEATURES LP6836P100 Packaged 0.25W Power PHEMT • • • • • GATE +24.5 dBm Typical Power at 15 GH...
Datasheet PDF File LP6836P100 PDF File

LP6836P100
LP6836P100

Overview
Filtronic Solid State FEATURES LP6836P100 Packaged 0.
25W Power PHEMT • • • • • GATE +24.
5 dBm Typical Power at 15 GHz 12 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 55% Power-Added-Efficiency Color-coded by IDSS range SOURCE DRAIN DESCRIPTION AND APPLICATIONS The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.
25 µm by 360 µm Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have been optimized for reliable high-power appl...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)