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LP6836SOT343

Filtronic Compound Semiconductors
Part Number LP6836SOT343
Manufacturer Filtronic Compound Semiconductors
Description PACKAGED MEDIUM POWER PHEMT
Published Mar 22, 2005
Detailed Description PRELIMINARY DATA SHEET LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1...
Datasheet PDF File LP6836SOT343 PDF File

LP6836SOT343
LP6836SOT343

Overview
PRELIMINARY DATA SHEET LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.
5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range.
It utilizes a 0.
25 µm x 360 µm Schottky barrier gate, defined by electron-beam photolithography.
The LP6836’s active areas are passivated with Si3N4, and the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that requ...


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