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LP750P100

Filtronic Compound Semiconductors
Part Number LP750P100
Manufacturer Filtronic Compound Semiconductors
Description PACKAGED 0.5 WATT POWER PHEMT
Published Mar 22, 2005
Detailed Description LP750P100 PACKAGED 0.5 WATT POWER PHEMT • FEATURES ♦ ♦ ♦ ♦ ♦ • 41 dBm IP3 at 12 GHz 27.5 dBm P-1dB at 12 GHz 10.5 dB Pow...
Datasheet PDF File LP750P100 PDF File

LP750P100
LP750P100

Overview
LP750P100 PACKAGED 0.
5 WATT POWER PHEMT • FEATURES ♦ ♦ ♦ ♦ ♦ • 41 dBm IP3 at 12 GHz 27.
5 dBm P-1dB at 12 GHz 10.
5 dB Power Gain at 12 GHz 2.
5 dB Noise Figure at 12 GHz 60% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.
25 µ m Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have been optimized for reliable high-power/low-noise applications.
The LP750 also features Si3 N4 passivation and is available in die form or in surface-mount packages.
The LP750P100 is designed for medium-power, linear amplification.
This device is suitable for applications in commercial and military environments, and it is appropriate to be used as a medium power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high efficiency amplifiers, and WLL systems.
• ELECTRICAL SPECIFICATIONS @ TAmbient = 22 ± 3 °C Parameter Output Power @ 1 dB Compression Power Gain @ 1 dB Compression Maximum Available Gain Noise Figure Power-Added Efficiency Output Intercept Point Saturated Drain-Source Current Transconductance Pinch-Off Voltage Gate-Drain Breakdown Voltage Magnitude Gate-Source Breakdown Voltage Magnitude Gate-Source Leakage Current Magnitude Symbol P1dB G1dB MAG NF η IP3 IDSS GM VP |VBDGD| |VBDGS| |IGSL| Test Conditions f = 12GHz; VDS = 8V; IDS = 50% IDSS f = 12GHz; VDS = 8V; IDS = 50% IDSS f = 12GHz; VDS = 8V; IDS = 50% IDSS f = 12GHz; VDS = 5V; IDS = 33% IDSS f = 12GHz; VDS = 5V; IDS = 50% IDSS; POUT = 25dBm f = 12GHz; VDS = 8V; IDS = 50% IDSS; POUT = 10dBm VDS = 2V; VGS = 0V VDS = 2V; VGS = 0V VDS = 2V; IDS = 4mA IGD = 4mA IGS = 4mA VGS = -5V 180 230 -2.
0 12 12 280 -1.
2 15 16 5 45 -0.
25 Min 26.
0 9.
0 Typ 27.
5 10.
5 14.
0 2.
5 60 41 265 Max Units dBm dB dB dB % dB...


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