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LP7612

Filtronic Compound Semiconductors
Part Number LP7612
Manufacturer Filtronic Compound Semiconductors
Description HIGH DYNAMIC RANGE PHEMT
Published Mar 22, 2005
Detailed Description HIGH DYNAMIC RANGE PHEMT • FEATURES ♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ ...
Datasheet PDF File LP7612 PDF File

LP7612
LP7612

Overview
HIGH DYNAMIC RANGE PHEMT • FEATURES ♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.
5 dB Power Gain at 18 GHz ♦ 1.
0 dB Noise Figure at 18 GHz ♦ 55% Power-Added Efficiency DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7612 SOURCE BOND PAD (2x) DIE SIZE: 18.
0X13.
0 mils (460x330 µm) DIE THICKNESS: 3.
9 mils (100 µm) BONDING PADS: 1.
9X1.
9 mils (50x50 µm) • DESCRIPTION AND APPLICATIONS The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.
25 µ m by 200 µ m Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resis...


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