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LP821

Part Number	LP821
Manufacturer	Polyfet RF Devices
Description	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Published	Mar 22, 2005
Detailed Description	polyfet rf devices LP821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
Datasheet	LP821 PDF File

Overview

polyfet rf devices LP821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 10.
0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 50 Watts Junction to Case Thermal Resistance o 3.
40 C/W Maximum Junction Temperature o 2...

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