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LP801

Polyfet RF Devices
Part Number LP801
Manufacturer Polyfet RF Devices
Description SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Published Mar 22, 2005
Detailed Description polyfet rf devices LP801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
Datasheet PDF File LP801 PDF File

LP801
LP801


Overview
polyfet rf devices LP801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.
0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 50 Watts Junction to Case Thermal Resistance o 3.
40 C/W Maximum Junction Temperature o 2...



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