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GA200SA60SP

International Rectifier
Part Number GA200SA60SP
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Aug 9, 2007
Detailed Description www.DataSheet4U.com Bulletin I27235 07/06 GA200SA60SP INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimize...
Datasheet PDF File GA200SA60SP PDF File

GA200SA60SP
GA200SA60SP

Overview
www.
DataSheet4U.
com Bulletin I27235 07/06 GA200SA60SP INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.
) • Industry standard outline • UL pending • Totally Lead-Free C Standard Speed IGBT VCES = 600V G E VCE(on) typ.
= 1.
10V @VGE = 15V, IC = 100A n-channel Benefits • Designed for increased operating efficiency in power conversion: UPS, SMPS, Welding, Induction heating • Easy to assemble and parallel • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages SOT-227 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV VISOL PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current c Clamped Inductive Load Current d Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy e RMS Isolation Voltage, Any Terminal to Case, t=1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Mounting Torque, 6-32 or M3 Screw Max.
600 200 100 400 400 ± 20 155 2500 630 250 -55 to + 150 -55 to + 150 12 lbf •in(1.
3N•m) Units V A V mJ V W °C Thermal Resistance Parameter RθJC RθCS Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Weight of Module Typ.
––– 0.
05 30 Max.
0.
20 ––– ––– Units °C/W gm www.
irf.
com 1 GA200SA60SP Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS Parameter Min.
Typ.
Max.
Units Conditions Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250μA Emitter-to-Collector Breakdown Voltage f 18 — — V VGE = 0V, IC = 1.
0A ΔV(BR)CES/ΔTJ Temperature Coeff.
of Breakdown Voltage — 0.
62 — V/°C VGE = 0V, IC = 1.
0mA — 1.
10 1.
3 IC = 100A VGE = 15V Collector-to-Emitter Saturation Voltage — 1.
33 — IC = 200A...


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