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MP1004-G

Comchip Technology
Part Number MP1004-G
Manufacturer Comchip Technology
Description (MP1000-G - MP1010-G) Silicon Bridge Rectifiers
Published Aug 10, 2007
Detailed Description www.DataSheet4U.com Silicon Bridge Rectifiers MP1000-G THRU MP1010-G (RoHS Device) Reverse Voltage: 50 ~ 1000 Volts For...
Datasheet PDF File MP1004-G PDF File

MP1004-G
MP1004-G

Overview
www.
DataSheet4U.
com Silicon Bridge Rectifiers MP1000-G THRU MP1010-G (RoHS Device) Reverse Voltage: 50 ~ 1000 Volts Forward Current: 10 Amp Features: Diffused Junction High Current Capability High Case Dielectric Strength High Surge Current Capability Ideal for Printed Circuit Board Application Plastic Material has Underwriters Laboratory Flammability Classification 94V-0 MP-10 H J G + ~ A E ~ - Mechanical Data: Case: Molded Plastic Terminals: Plated Leads Solderable Per MIL STD-202, Method 208 Weight: 5.
4 grams (approx.
) Mounting position: Through Hole for #6 Screw D E Dim A B C D E C B Metal Heat Sink KBP Min.
Max 14.
73 15.
75 5.
80 6.
90 19.
00 1.
00 O Typical 6.
14 5.
11 Hole for #6 screw G 3.
60 4.
00 J 10.
30 11.
30 2.
38x45ºC Typical I All Dimensions in mm Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate currently by 20%.
Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note1) @ TA = 50ºC MP MP MP MP KBP KBP KBP Symbol 1000-G 1001-G 1002-G 1004-G 1006-G 1008-G 1010-G UNIT VRRM VRWM VR VR(RMS) Io 35 70 140 280 10 420 560 700 V A 50 100 200 400 600 800 1000 V Non-Repetitive Peak Forward Surge Current 8.
3ms Single IFSM Half-sine-wave superimposed on rated load (JEDEC Method) Forward Voltage (per element) @ IF=2.
0A Peak Reverse Current @ TA=25ºC At Rated DC Blocking Voltage @ TA=100ºC Rating for Fusing (t<8.
3ms) (Note2) Typical Thermal Resistance (Note4) Operating and Storage Temperature Range Typical Junction Capacitance (Note3) Note: 200 A VFM IRM I2t RθJA TJ, TSTG CJ 1.
1 10 1.
0 64 7.
5 -55 to +160 110 V uA A2S K/W ºC pF 1.
Non-repetitive for t>1ms and <8.
3ms.
2.
Thermal resistance junction to ambient mounted on PC board with 13.
0 x 13.
0 x 0.
03 mm thick land areas.
3.
Measured at 1.
0MHz and applied reverse voltage of 4.
0V D.
C.
4.
Thermal resistance junction to case per ele...


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