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DMBT5087

Dc Components
Part Number DMBT5087
Manufacturer Dc Components
Description PNP Transistor
Published Aug 13, 2007
Detailed Description www.DataSheet4U.com DC COMPONENTS CO., LTD. R DMBT5087 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITA...
Datasheet PDF File DMBT5087 PDF File

DMBT5087
DMBT5087

Overview
www.
DataSheet4U.
com DC COMPONENTS CO.
, LTD.
R DMBT5087 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low noise, high gain, general purpose amplifier applications.
SOT-23 .
020(0.
50) .
012(0.
30) Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .
063(1.
60) .
055(1.
40) .
108(0.
65) .
089(0.
25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -50 -50 -3 -50 225 +150 -55 to +150 Unit V V V mA mW o o .
091(2.
30) .
067(1.
70) .
118(3.
00) .
110(2.
80) .
045(1.
15) .
034(0.
85) .
051(1.
30) .
035(0.
90) .
026(0.
65) .
010(0.
25) .
0043(0.
11) .
0035(0.
09) C .
004 Max (0.
10) .
027(0.
67) .
013(0.
32) C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO1 ICBO2 VCE(sat) VBE(sat) hFE1 hFE2 hFE3 fT Cob 380µs, Duty Cycle Min -50 -50 -3 250 250 250 40 2% Typ - Max -10 -50 -0.
3 -0.
85 800 4 Unit V V V nA nA V V MHz pF Test Conditions IC=-100µA IC=-1mA IE=-10µA VCB=-10V VCB=-35V IC=-10mA, IB=-1mA IC=-10mA, IB=-1mA IC=-0.
1mA, VCE=-5V IC=-1mA, VCE=-5V IC=-10mA, VCE=-5V IC=-0.
5mA, VCE=-5V, f=100MHz VCB=-5V, f=100MHz Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width ...


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