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DMBTA56

Dc Components
Part Number DMBTA56
Manufacturer Dc Components
Description NPN Transistor
Published Aug 13, 2007
Detailed Description www.DataSheet4U.com DC COMPONENTS CO., LTD. R DMBTA56 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAX...
Datasheet PDF File DMBTA56 PDF File

DMBTA56
DMBTA56

Overview
www.
DataSheet4U.
com DC COMPONENTS CO.
, LTD.
R DMBTA56 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications.
Pinning 1 = Base 2 = Emitter 3 = Collector .
020(0.
50) .
012(0.
30) SOT-23 3 .
063(1.
60) .
055(1.
40) .
108(0.
65) .
089(0.
25) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -80 -80 -4 -500 225 +150 -55 to +150 Unit V V V mA mW o o 1 2 .
091(2.
30) .
067(1.
70) .
118(3.
00) .
110(2.
80) .
045(1.
15) .
034(0.
85) .
051(1.
30) .
035(0.
90) .
026(0.
65) .
010(0.
25) .
0043(0.
11) .
0035(0.
09) C .
004 Max (0.
10) .
027(0.
67) .
013(0.
32) C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICEO (1) Min -80 -80 -4 50 50 100 2% Typ - Max -100 -100 -0.
25 -1.
2 - Unit V V V nA nA V V MHz Test Conditions IC=-100µA IC=-1mA IE=-100µA VCB=-80V VCE=-60V IC=-100mA, IB=-10mA IC=-100mA, VCE=-1V IC=-10mA, VCE=-1V IC=-100mA, VCE=-1V IC=-10mA, VCE=-2V VCE(sat) VBE(on) hFE1 hFE2 fT 380µs, Duty Cycle ...


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