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IRFP4227PBF

International Rectifier
Part Number IRFP4227PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Aug 14, 2007
Detailed Description www.DataSheet4U.com PD - 97070 PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Su...
Datasheet PDF File IRFP4227PBF PDF File

IRFP4227PBF
IRFP4227PBF

Overview
www.
DataSheet4U.
com PD - 97070 PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability IRFP4227PbF Key Parameters 200 240 21 130 175 D D VDS max VDS (Avalanche) typ.
RDS(ON) typ.
@ 10V IRP max @ TC= 100°C TJ max V V m: A °C G S G D S TO-247AC D S G Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels.
This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating.
Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability.
These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Gate Drain Source Absolute Maximum Ratings Parameter VGS ID @ TC = 25°C ID @ TC = 100°C IDM IRP @ TC = 100°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 10lb in (1.
1N m) Max.
±30 65 46 260 130 330 190 2.
2 -40 to + 175 300 Units V A c Repetitive Peak Current g W W/°C °C x x N Thermal Resistance RθJC RθCS RθJA Junction-to-Case f Parameter Typ.
––– 0.
50 ––– Max.
0.
45 ––– 62 Units °C/W Case-to-Sink, Flat, Greased Surface Junction-to-Ambient f Notes  through † are...


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