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IRFP4242PBF

International Rectifier
Part Number IRFP4242PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Aug 14, 2007
Detailed Description www.DataSheet4U.com PD - 96966A PDP MOSFET Features l Advanced process technology l Key parameters optimized for PDP S...
Datasheet PDF File IRFP4242PBF PDF File

IRFP4242PBF
IRFP4242PBF

Overview
www.
DataSheet4U.
com PD - 96966A PDP MOSFET Features l Advanced process technology l Key parameters optimized for PDP Sustain & Energy Recovery applications l Low EPULSE rating to reduce the power dissipation in Sustain & ER applications l Low QG for fast response l High repetitive peak current capability for reliable operation l Short fall & rise times for fast switching l175°C operating junction temperature for improved ruggedness l Repetitive avalanche capability for robustness and reliability IRFP4242PbF Key Parameters 300 360 49 93 175 D D VDS min VDS (Avalanche) typ.
RDS(ON) typ.
@ 10V IRP max @ TC= 100°C TJ max V V m: A °C G S G D S TO-247AC D S G Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels.
This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating.
Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability.
These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
G a te D ra in S o u rc e Absolute Maximum Ratings Parameter VGS ID @ TC = 25°C ID @ TC = 100°C IDM IRP @ TC = 100°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 10lb in (1.
1N m) Max.
±30 46 33 190 93 430 210 2.
9 -40 to + 175 300 Units V A c Repetitive Peak Current g W W/°C °C x x N Thermal Resistance RθJC Junction-to-Case f Parameter Typ.
––– Max.
0.
35 Units °C/W Notes  through … are on page 8 www.
irf.
com 1 7/25/05 IRFP4242PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parame...


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