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BLC6G20LS-110

NXP
Part Number BLC6G20LS-110
Manufacturer NXP
Description UHF power LDMOS transistor
Published Aug 17, 2007
Detailed Description www.DataSheet4U.com BLC6G20-110; BLC6G20LS-110 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data shee...
Datasheet PDF File BLC6G20LS-110 PDF File

BLC6G20LS-110
BLC6G20LS-110

Overview
www.
DataSheet4U.
com BLC6G20-110; BLC6G20LS-110 UHF power LDMOS transistor Rev.
01 — 30 January 2006 Objective data sheet 1.
Product profile 1.
1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation f (MHz) CW GSM EDGE 2-carrier W-CDMA VDS (V) PL (W) 100 48 (AV) 25 (AV) Gp (dB) 17 17.
5 18 ηD (%) 51 40 32 ACPR400 (dBc) −60 ACPR600 (dBc) −70 EVM (%) 2.
1 IMD3 (dBc) −37 [1] ACPR (dBc) −40 [1] 1930 to 1990 28 1930 to 1990 28 1930 to 1990 28 [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at...


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