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SFF11N80

SSDI
Part Number SFF11N80
Manufacturer SSDI
Description N-Channel Power MOSFET
Published Aug 17, 2007
Detailed Description www.DataSheet4U.com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax:...
Datasheet PDF File SFF11N80 PDF File

SFF11N80
SFF11N80

Overview
www.
DataSheet4U.
com Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.
com * www.
ssdi-power.
com SFF11N80 Series DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF11N80 __ __ __ │ │ │ │ │ │ │ │ │ └ │ └ Screening 2/ __ = Not Screen │ TX = TX Level │ TXV = TXV Level │ S = S Level │ └ Lead Option 3/ __ = Straight Leads 11 AMP / 800 Volts 0.
95 Ω N-Channel MOSFET Features: • • • • • • • • • • • Rugged Construction with Polysilicon Gate Cell Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed, Isolated Package Ceramic Seal Package Available.
Contact Factory TX, TXV, S-Level screening available Replacement for IXTH11N80 Types DB = Down Bend UB = Up Bend Package 3/ M = TO-254 Z = TO-254Z Maximum Ratings Drain – Source Voltage Gate – Source Voltage Continues Collector Current Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance Junction to Case TO-254 (M) TO-254Z (Z) TC = 25ºC TC = 55ºC Symbol Value Units VDS VGS ID PD Top & Tstg RθJC 800 ±20 11 150 114 -55 to +175 0.
83 Volts Volts Amps W ºC ºC/W NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00213C DOC www.
DataSheet4U.
com Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.
com * www.
ssdi-power.
com SFF11N80 Series Electrical Characteristics 4/ Drain to Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain to Source On State Resistance (VGS = 10V, ID = 5.
5A) On State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10V) Gate Threshold Voltage (VDS = VGS, ID = 250µA) Gate to Source Leakage (VGS = ±20V) Zero ...


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