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SFF1310Z

SSDI
Part Number SFF1310Z
Manufacturer SSDI
Description N-Channel Power MOSFET
Published Aug 17, 2007
Detailed Description www.DataSheet4U.com PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Av. * La Mirada, Ca 90670 Phone: (562) 404...
Datasheet PDF File SFF1310Z PDF File

SFF1310Z
SFF1310Z

Overview
www.
DataSheet4U.
com PRELIMINARY SOLID STATE DEVICES, INC.
14830 Valley View Av.
* La Mirada, Ca 90670 Phone: (562) 404-7855 * Fax: (562) 404-1773 SFF1310M SFF1310Z 40 AMPS 200 VOLTS 0.
050 S N-CHANNEL POWER MOSFET TO-3 DESIGNER'S DATA SHEET FEATURES: • Rugged construction with polysilicon gate • Low RDS (on) and high transconductance • Excellent high temperature stability • Very fast switching speed • Fast recovery and superior dv/dt performance • Increased reverse energy capability • Low input and transfer capacitance for easy paralleling • Hermetically sealed package • TX, TXV, and Space Level screening available • Replaces: SMM40N20 Type MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case Total Device Dissipation @ TC = 25oC @ TC = 55oC SYMBOL VDS VGS ID Top & Tstg R 2 JC PD VALUE 200 ±20 40 -55 to +150 0.
5 250 190 o UNIT Volts Volts Amps o C C/W Watts PACKAGE OUTLINE: TO-3 PIN OUT: DRAIN: SOURCE: GATE: PIN 1 PIN 2 PIN 3 NOTE: All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0004A www.
DataSheet4U.
com SFF1310M SFF1310Z PRELIMINARY SOLID STATE DEVICES, INC.
14830 Valley View Av.
* La Mirada, Ca 90670 Phone: (562) 404-7855 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) RATING Drain to Source Breakdown Voltage (VGS =0 V, ID =250:A) Drain to Source ON State Resistance (VGS = 10 V, 60% of Rated ID) ID = 37.
5A SYMBOL BVDSS RDS(on) ID(on) VGS(th) g fs MIN 200 50 2.
0 20 TYP 25 190 35 95 28 38 110 30 1.
5 4400 800 285 MAX 0.
050 UNIT V S A V S(É) ON State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10 V) Gate Threshold Voltage (VDS =VGS, ID = 4mA) Forward Transconductance (VDS > ID(on) x RDS (on) Max, IDS = 50% rated ID) Zero Gate Voltage Drain Current VDS = max rated Voltage, TA = 25oC (VGS = 0V...


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