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SFF70N10C

SSDI
Part Number SFF70N10C
Manufacturer SSDI
Description N-Channel Power MOSFET
Published Aug 17, 2007
Detailed Description www.DataSheet4U.com SFF70N10C 70 AMP 600 VOLT 0.030Ω N-CHANNEL POWER MOSFET TO-254 Ceramic SOLID STATE DEVICES, INC. 1...
Datasheet PDF File SFF70N10C PDF File

SFF70N10C
SFF70N10C

Overview
www.
DataSheet4U.
com SFF70N10C 70 AMP 600 VOLT 0.
030Ω N-CHANNEL POWER MOSFET TO-254 Ceramic SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 DESIGNER'S DATA SHEET FEATURES: • Rugged construction with poly silicon gate • Ultra low RDS (on) and high transconductance • Excellent high temperature stability • Very fast switching speed • Fast recovery and superior dv/dt performance • Increased reverse energy capability • Low input and transfer capacitance for easy paralleling • Hermetically sealed package • TX, TXV and Space Level screening available • Replaces: SMM70N10 Types MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case Total Device Dissipation @ TC = 25 C @ TC = 55oC o SYMBOL VDS V GS ID Top & Tstg R0JC PD VALUE 100 + 20 56 1/ -55 to +150 .
83 150 114 UNIT Volts Volts Amps o C o C/W Watts CASE OUTLINE: TO-254 Ceramic Pin Out: Pin 1: Drain Pin 2: Source Pin 3: Gate NOTE: All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00245B www.
DataSheet4U.
com SFF70N10C SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) RATING Drain to Source Breakdown Voltage (VGS =0 V, ID = 250µA) (VGS = 10 V, ID = 45 A) SYMBOL MIN TYP MAX UNIT BVDSS RDS(on) ID(on) VGS(th) gfs IDSS 100 70 2.
0 20 - 0.
025 0.
03 4.
0 250 250 +100 -100 140 40 80 40 180 100 40 1.
8 200 - V Drain to Source on State Resistance On State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10 V) Ω A V 40 110 30 50 25 15 80 15 1.
0 125 0.
3 4100 1200 310 Gate Threshold Voltage (VDS = VGS, ID = 250µA) Forward Transconductance (VDS > ID(on) X RDS (on) Max, IDS = 45A) Smho µA nA Zero Gate Voltage ...


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