DatasheetsPDF.com

SFF75N06-28

SSDI
Part Number SFF75N06-28
Manufacturer SSDI
Description N-Channel Power MOSFET
Published Aug 17, 2007
Detailed Description www.DataSheet4U.com PRELIMINARY SFF75N06-28 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Ph...
Datasheet PDF File SFF75N06-28 PDF File

SFF75N06-28
SFF75N06-28

Overview
www.
DataSheet4U.
com PRELIMINARY SFF75N06-28 SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 DESIGNER'S DATA SHEET FEATURES: • Rugged construction with poly silicon gate • Low RDS (on) and high transconductance • Excellent high temperature stability • Very fast switching speed • Fast recovery and superior dv/dt performance • Increased reverse energy capability • Low input transfer capacitance for easy paralleling • Hermetically sealed surface mount package • TX, TXV and Space Level screening available MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Drain to Gate Voltage (RGS = 1.
0 mS) Gate to Source Voltage Continuous Drain Current @ TC = 25oC Operating and Storage Temperature Thermal Resistance, Junction to Case (All Four) Total Device Dissipation @ TC = 25 oC SYMBOL VDS VDG VGS ID Top & Tstg R 2 JC PD 30 AMP 1/ 60 VOLTS 25mS N-CHANNEL POWER MOSFET 28 PIN CLCC VALUE 100 60 ±20 30 -55 to +150 3.
5 35 UNIT Volts Volts Volts Amps o C o C/W Watts PACKAGE OUTLINE: 28 PIN CLCC PIN OUT: SOURCE: 1, 15 - 28 DRAIN: 5 - 11 GATE: 2, 3, 13, 14 NOTE: All drain/source pins must be connected on the PC board in order to maximize current carrying capability and to minimize RDS (on) NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0001A www.
DataSheet4U.
com PRELIMINARY SFF75N06-28 SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) RATING Drain to Source Breakdown Voltage (VGS =0 V, ID =250:A) Drain to Source 60% of Rated ID, TC = 25oC ON State Resistance 2/ Rated ID, TC = 25oC (VGS = 10 V) 60% of Rated ID, TC = 150oC Gate Threshold Voltage (VDS =VGS, ID =250:A) Forward Transconductance (VDS > ID(on) x RDS (on) Max, IDS =60% rated ID) Zero Gate Voltage Drain Curren...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)