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SDR2HF1.8

SSDI
Part Number SDR2HF1.8
Manufacturer SSDI
Description (SDR2HF1.8 / SDR2HF2.0) HYPER FAST RECOVERY RECTIFIER
Published Aug 27, 2007
Detailed Description www.DataSheet4U.com Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (...
Datasheet PDF File SDR2HF1.8 PDF File

SDR2HF1.8
SDR2HF1.8

Overview
www.
DataSheet4U.
com Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.
com * www.
ssdi-power.
com SDR2HF1.
8 and SMS SDR2HF2.
0 and SMS 2 AMPS 1800 - 2000 VOLTS 35 nsec HYPER FAST RECOVERY RECTIFIER Axial Surface Mount Square Tab (SMS) Designer’s Data Sheet FEATURES: • • • • • • • • • Hyper Fast Recovery: 35 nsec maximum PIV to 2400 Volts Low Reverse Leakage Current Hermetically Sealed Low Thermal Resistance Low trr Change at High Temperature (typical: trr = 55ns @ 100°C) TX, TXV, and Space Level Screening Available.
Contact Factory.
Fast Recovery Versions Available.
Contact Factory.
Single Junction Construction Replaces 1N6512 and 1N6513 in many applications.
• MAXIMUM RATINGS Reverse Voltage SDR2HF1.
8 & SMS SDR2HF2.
0 & SMS Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TA=25oC, L=.
125”) Peak Surge Current (8.
3 ms Pulse, Half Sine Wave, Superimposed on IO, Allow Junction to Reach Equilibrium between Pulses, TA=25oC, L=.
125”) Temperature Range Maximum Thermal Resistance Junction to Lead, L = 0.
125” (Axial Lead) Junction to End Tab (Surface Mount) Operating Storage Symbol VRRM VRWM VR IO Value 1800 2000 Units Volts 2 Amps IFSM 16 Amps TOP Tstg RθJL RθJE -65 to +175 -65 to +200 6 4 o o C C/W NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0096B DOC SDR2HF1.
8 and SMS SDR2HF2.
0 and SMS Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.
com * www.
ssdi-power.
com ELECTRICAL CHARACTERISTICS Breakdown Voltage (IR = 50 µA, TA = 25oC, Pulse) Instantaneous Forward Voltage Drop (TA = 25oC, Pulse) Instantaneous Forward Voltage Drop (TA = -55oC, Pulse) Reverse Leakage Current (VR =85% rated VR, Pulse) Junction Capacitance (VR = 50 VDC, TA = 25oC, f = 1 MHz) Reverse Recovery Time (IF ...


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