DatasheetsPDF.com

SDR3NHFSMS

SSDI
Part Number SDR3NHFSMS
Manufacturer SSDI
Description (SDR3xHFSMS) Hyper Fast Rectifier
Published Aug 27, 2007
Detailed Description www.DataSheet4U.com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax:...
Datasheet PDF File SDR3NHFSMS PDF File

SDR3NHFSMS
SDR3NHFSMS

Overview
www.
DataSheet4U.
com Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.
com * www.
ssdi-power.
com SDR3KHF & SDR3KHFSMS thru SDR3NHF & SDR3NHFSMS 3 AMP 800 - 1200 V 35 nsec Hyper Fast Rectifier Axial Lead Diode SMS DESIGNER’S DATA SHEET Features: • Hyper Fast Recovery: 35 nsec maximum • PIV to 1200 Volts • Hermetically Sealed • Void Free Construction • For High Efficiency Applications • Single Chip Construction • Low Reverse Leakage • TX, TXV, S Level screening Available Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage SDR3KHF SDR3MHF SDR3NHF VRRM VRSM VR Io IFSM TOP & TSTG 800 1000 1200 3.
0 70 -65 to +175 20 14 Volts Amps Amps ºC ºC/W Average Rectified Forward Current (Resistive Load, 60 hz Sine Wave, TA = 25 °C) Peak Surge Current (8.
3 ms Pulse, Half Sine Wave, TA = 25 °C) Operating & Storage Temperature Maximum Thermal Resistance Junction to Leads, L = 3/8 Junction to Tabs R?JE NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0097A DOC Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.
com * www.
ssdi-power.
com SDR3DHF & SDR3DHFSMS thru SDR3NHF & SDR3NHFSMS Symbol SDR3KHF – SDR3NHF SDR3KHF – SDR3NHF Max Units Electrical Characteristic Instantaneous Forward Voltage Drop (TA = 25ºC, pulsed) Instantaneous Forward Voltage Drop (TA = -55ºC, pulsed) Reverse Leakage Current (Rated VR, TA = 25ºC, pulsed) Reverse Leakage Current (Rated VR, TA = 100ºC, pulsed) Reverse Recovery Time (IF = 500mA, IR = 1A, IRR = 250mA, TA = 25ºC) Junction Capacitance (VR = 10VDC, f = 1MHz, TA = 25ºC) Case Outline: (Axial) 3A 1A 1A VF1 VF2 VF3 3.
1 1.
9 2.
0 10 300 35 30 DIM A B C D MIN –– –– 0.
047” 0.
950” VDC VDC µA µA nsec pF MAX 0.
165” 0.
220” 0.
053” –– IR1 IR2 tRR CJ Case Outli...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)