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LN162S

Panasonic Semiconductor
Part Number LN162S
Manufacturer Panasonic Semiconductor
Description GaAs Infrared Light Emitting Diode
Published Mar 22, 2005
Detailed Description Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Feature...
Datasheet PDF File LN162S PDF File

LN162S
LN162S

Overview
Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 3.
5 mW (typ.
) Infrared light emission close to monochromatic light : λP = 950 nm (typ.
) Small ceramic package 3.
75±0.
3 2.
0±0.
2 12.
5 min.
ø3.
0±0.
15 ø0.
3±0.
05 ø0.
45±0.
05 0.
9±0.
15 Absolute Maximum Ratings (Ta = 25˚C) 2 1 1: Anode 2: Cathode Parameter Power dissipation Forward current (DC) Pulse forward Current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 75 50 1 3 –25 to +85 –30 to +100 Unit mW mA A V ˚C ˚C f = 100 Hz, Duty cycle = 0.
1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO λP ∆λ VF IR Ct θ Conditions IF = 50mA IF = 50mA IF = 50mA IF = 50mA VR = 3V VR = 0V, f = 1MHz The angle in ...


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