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IRLZ44ZS

International Rectifier
Part Number IRLZ44ZS
Manufacturer International Rectifier
Description AUTOMOTIVE MOSFET
Published Aug 28, 2007
Detailed Description PD - 95849 AUTOMOTIVE MOSFET IRLZ44Z IRLZ44ZS IRLZ44ZL HEXFET® Power MOSFET D Features ● ● ● ● ● ● Logic Level Advan...
Datasheet PDF File IRLZ44ZS PDF File

IRLZ44ZS
IRLZ44ZS

Overview
PD - 95849 AUTOMOTIVE MOSFET IRLZ44Z IRLZ44ZS IRLZ44ZL HEXFET® Power MOSFET D Features ● ● ● ● ● ● Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 13.
5mΩ ID = 51A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
TO-220AB IRLZ44Z D2Pak IRLZ44ZS Max.
51 36 204 80 0.
53 ± 16 78 110 See Fig.
12a, 12b, 15, 16 -55 to + 175 TO-262 IRLZ44ZL Units A W W/°C V mJ A mJ °C Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V Pulsed Drain Current ™ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy d Ù h g Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance RθJC RθCS RθJA RθJA Junction-to-Case i 300 (1.
6mm from case ) 10 lbf in (1.
1N m) y y k Parameter Typ.
Max.
1.
87 ––– 62 40 Units °C/W Case-to-Sink, Flat Greased Surface Junction-to-Ambient ik ik ––– 0.
50 ––– ––– Junction-to-Ambient (PCB Mount) jk www.
irf.
com 1 3/2/04 IRLZ44Z/S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
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